sep. 2001 FL10KM-12A outline drawing dimensions in mm to-220fn mitsubishi nch power mosfet FL10KM-12A high-speed switching use application smps, inverter fluorescent light sets, etc. 600 30 10 30 10 40 C 55 ~ +150 C 55 ~ +150 2000 2.0 v gs = 0v v ds = 0v l = 200 h ac for 1minute, terminal to case typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight v v a a a w c c v g v dss v gss i d i dm i da p d t ch t stg v iso symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 10v drive v dss ............................................................................... 600v r ds (on) (max) ................................................................ 1.1 ? i d ......................................................................................... 10a ? ? ? ? gate ? drain ? source 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ???
sep. 2001 mitsubishi nch power mosfet FL10KM-12A high-speed switching use performance curves v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v a ma v ? v s pf pf pf ns ns ns ns v c/w 600 30 2.0 3.0 0.92 4.60 7.0 1150 135 45 24 40 220 85 1.5 10 1 4.0 1.10 5.50 2.0 3.13 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v i gs = 100 a, v ds = 0v v gs = 25v, v ds = 0v v ds = 600v, v gs = 0v i d = 1ma, v ds = 10v i d = 5a, v gs = 10v i d = 5a, v gs = 10v i d = 5a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 5a, v gs = 10v, r gen = r gs = 50 ? i s = 5a, v gs = 0v channel to case 10 C 1 10 0 2 3 5 7 10 1 2 3 5 7 2 3 5 3 10 1 57 2 10 2 357 2 10 3 357 5 7 2 3 tw = 10s 10ms 100s 1ms dc t c = 25 c single pulse 0 4 8 12 16 20 0 1020304050 v gs = 10v 6v 5v 4.5v 4v p d = 40w t c = 25 c pulse test 0 2 4 6 8 10 0 4 8 12 16 20 p d = 40w t c = 25 c pulse test v gs = 10v 5v 6v 4.5v 4v power dissipation derating curve case temperature t c ( c) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 0 10 20 30 40 50 0 200 50 100 150
sep. 2001 mitsubishi nch power mosfet FL10KM-12A high-speed switching use on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( ? ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) 0 8 16 24 32 40 0 4 8 12 16 20 5a t c = 25 c pulse test 10a i d = 15a 1 0 2 3 4 5 10 0 10 1 23 57 10 2 23 57 t c = 25 c pulse test v gs = 10v 4 0 8 12 16 20 4 0 8 12 16 20 t c = 25 c v ds = 50v pulse test 10 C 1 10 0 23 57 10 1 23 57 10 C 1 10 0 2 3 5 7 10 1 2 3 5 7 v ds = 10v pulse test t c = 25 c 125 c 75 c 10 0 23 57 10 1 22 357 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t c h = 25 c v dd = 200v v gs = 10v t d(off) t d(on) t f t r 10 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 0 2 10 1 357 357 2 10 2 357 23 10 1 2 ciss coss crss t c h = 25 c f = 1mh z v gs = 0v
sep. 2001 mitsubishi nch power mosfet FL10KM-12A high-speed switching use 0 4 8 12 16 20 0 20406080100 400v t c h = 25 c i d = 10a 200v v ds = 100v 0.4 0.6 0.8 1.0 1.2 1.4 C 50 0 50 100 150 v gs = 0v i d = 1ma 1.0 0 2.0 3.0 4.0 5.0 C 50 0 50 100 150 v ds = 10v i d = 1ma 0 8 16 24 32 40 0 0.8 1.6 2.4 3.2 4.0 t c = 125 c 75 c 25 c v gs = 0v pulse test 10 C 1 10 0 2 3 5 7 10 1 2 3 5 7 C 50 0 50 100 150 v gs = 10v i d = 5a pulse test 10 C 2 10 C 1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 C 4 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 C 3 10 C 2 10 C 1 d = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse p dm tw d = t tw t gate-source voltage vs. gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch C c) ( c/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c)
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